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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
VDSS ID25
RDS(on)
trr
= 800 V = 14 A 720 m 250 ms
TO-247 (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 5 TC = 25C
Maximum Ratings 800 800 30 40 14 40 7 30 500 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C C PLUS220 (IXFV) G D
(TAB) D (TAB)
TO-3P (IXFQ)
S
TO-268 (IXFT)
G S D (TAB)
G
D (TAB)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) PLUS220, PLUS220 SMD TO-268, TO-3P TO-247
300 260
D
S
1.13/10 Nm/lb.in. 2 5.5 6 g g g
PLUS220SMD (IXFV...S)
G S G = Gate S = Source D = Drain TAB = Drain D (TAB)
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 800 3.0 5.5 100 25 1 V V nA A mA
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
DS99593E(07/06)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
720 m
(c) 2006 IXYS All rights reserved
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 15 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 250 19 26 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 (External) 29 62 27 61 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 20 S pF pF pF ns ns ns ns nC nC nC 0.31 C/W (TO-247, TO-3P) 0.21 C/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 20 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 14 40 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 (IXFT) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V 0.4 5
250
ns C A
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 1. Output Characteristics @ 25C
14 VGS = 10V 7V 27 24 21 10 VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
12
ID - Amperes
8 6
ID - Amperes
6V
18 15 12 9
6V
4 5V 2 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 12 15 18 21 24 27 30 5V
0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
14 VGS = 10V 12 6V 10 2.8 2.5 3.1
Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
ID - Amperes
2.2 1.9 1.6 1.3 1 I D = 14A
8
5V
6
I D = 7A
4 2
0.7 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 25 50 75 100 125 150
0
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C 16 14 12 2.2
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
ID - Amperes
TJ = 25C 0 4 8 12 16 20 24 28
2 1.8 1.6 1.4
10 8 6 4
1.2 1 0.8
2 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 7. Input Admittance
20 18 16 14 30 27 24
Fig. 8. Transconductance
g f s - Siemens
21 18 15 12 9 6 3 0 TJ = - 40C 25C 125C
ID - Amperes
12 10 8 6 4 2 0 3.5 4
TJ = 125C 25C - 40C
4.5
5
5.5
6
0
2
4
6
8
10
12
14
16
18
20
VGS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
45 40 35 10 9 8 7 VDS =400V I D = 7A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
30
VGS - Volts
TJ = 25C
6 5 4 3 2 1 0
25 TJ = 125C 20 15 10 5 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
0
10
20
30
40
50
60
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 f = 1 MHz 1.000
Fig. 13. Maximum Transient Thermal Resistance
Capacitance - PicoFarads
C iss
R(th)JC - C / W
1,000
0.100
C oss 100
C rss
10 0 5 10 15 20 25 30 35 40
0.010 0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_14N80P (6J) 5-02-06.xls
IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS
TO-3P-3L PACKAGE Outline PLUS220 (IXFV) Outline
1. GATE 2. DRAIN (COLLECTOR) 3. SOURCE (EMITTER) 4. DRAIN (COLLECTOR) ALL METAL AREA ARE TIN PLATED.
Ref: IXYS CO 0170 RA
(c) 2006 IXYS All rights reserved

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